v rrm = 600 v - 1000 v i f(av) = 200 a features ? high surge capability three tower package ? isolation type package ? not esd sensitive parameter symbol unit re p etitive p eak reverse volta g e v rrm v msrt20060(a)d thru msrt200100(a)d ? types from 600 v to 1000 v v rrm ? electrically isolated base plate silicon standard recover y diode conditions msrt20060(a)d msrt20080(a)d msrt200100(a)d 800 maximum ratings, at t j = 25 c, unless otherwise specified 600 1000 pp g rms reverse voltage v rms v dc blocking voltage v dc v operating temperature t j c storage temperature t stg c parameter symbol unit average forward current (per leg) i f(av) a maximum instantaneous forward voltage (per leg) a ma thermal characteristics maximum thermal resistance, junction - case (per leg) r jc c/w maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f 424 v conditions electrical characteristics, at tj = 25 c, unless otherwise spe cified i fm = 200 a, t j = 25 c 566 707 msrt200100(a)d 1.1 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 msrt20060(a)d msrt20080(a)d 0.35 1000 1.1 1.1 -55 to 150 555 800 600 10 peak forward surge current (per leg) i fsm t c = 140 c 200 200 200 3000 a 0.35 0.35 t j = 150 c t j = 25 c t p = 8.3 ms, half sine 3000 3000 feb 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
msrt20060(a)d thru msrt200100(a)d feb 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. msrt20060(a)d thru msrt200100(a)d feb 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3
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